mr850 - mr858 3.0a fast recovery rectifier data sheet 27 28 , rev. - features l glass passivated die construction l ideally suited for automatic assembly l low forward voltage drop, high efficiency l low power loss a b a l fast recovery time l high surge current capability c d mechanical data l case: molded plastic l terminals: solder plated, solderable per mil - std - 750, method 2026 l polarity: cathode band or cathode notch l marking: type number l mounting position: any l weight: 0.21 grams (approx.) maximum ratings and electrical characteristics @t a =25c unless otherwise specified characteristic symbol mr850 mr851 mr852 mr854 mr856 mr858 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 v rms revers e voltage v r(rms) 35 70 140 280 420 560 v average rectified output current @t l = 75c i o 3.0 a non - repetitive peak forward surge current 8.3ms single half sine - wave superimposed on rated load (jedec method) i fsm 1 5 0 a forward volta ge @ i f = 3.0a v fm 1.25 1.30 v peak reverse current @t a = 25c at rated dc blocking voltage @ t a = 1 00 c i rm 10 20 0 a reverse recovery time (note 1) t rr 1 00 150 ns typical junction capacitance (note 2) c j 8 0 pf operating and storage temperature range t j, t stg - 65 to +150 c note: 1. measured with i f = 0.5a, i r = 1.0a, i rr = 0.25a, 2. measured at 1.0 mhz and applied reverse voltage of 4.0 v dc. sensitron semiconductor ? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? do-201ad dim min max min max a 25.4 ? 1.000 ? b 8.50 9.50 0.335 0.374 c 1.20 1.30 0.047 0.051 d 5.0 5 .60 0.197 0.220 all in mm in inch
mr850 - mr858 3.0a fast recovery rectifier data sheet 27 28 , rev. - sensitron semiconductor ? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? fig.5- reverse recovery time characteristic and test circuit diagram 50 noninductive non inductive oscilloscope (note 1) pulse generator (note 2) dut (+) 50vdc (approx) (-) notes: 1. rise time=7ns max. input impedance= 1 megohm 22pf 2. rise time=10ns max. sourse impedance= 50 ohms (-) (+) 10 noninductive -1.0a -0.25a 0 +0.5a trr 1cm set time base for 5/ 10ns/ cm r a tings and characteristic cu r ves (mr850 - mr858) fig.3- typical forward characteristics inst ant aneous for w ard current . (a) 1.6 1.80.4 0.6 0.8 1.0 1.2 1.4 .03 0.1 0.3 1.0 10 20 3.0 .01 forward voltage. (v) tj=25 c pulse width=300 s 1% duty cycle o fig.4- typical junction capacitance junction cap acit ance.(pf) 1 2 4 6 10 100604020 20 0 40 60 90 80 reverse voltage. (v) tj=25 c 0 fig.2- maximum non-repetitive peak surge current peak for w ard surge current . (a) 10 5 1 50 100 100 150 50 10 number of cycles at 60hz 8.3ms single half sine wave jedec method tj=25 c 0 fig.1- maximum forward current derating curve a verage for w ard current amperes 250 50 75 100 125 150 175 2 0 1 3 4 ambient temperature. ( c ) o single phase half wave 60hz resistive or inductive load 0.375"(9.5mm) lead length
? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron semiconductor technical data disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices t hat feature assured safety o r by means of users? fail-safe prec autions or other arrangement. 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datasheet(s). sensitron semiconducto r assumes no responsibility for any intellec tual property claims or any other problems that may result from applications of informatio n, products or circuits described in the d atasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semic onductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any form , in whole or part, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations.
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